Modification of nano-wire diameter depending on stress

An analytical analysis of stress profile in cylindrical nanowires vertically grown on silicon (Si) substrate has been performed. Depending on the lattice-mismatch a tensile stress as high as 1GPa for TiO 2 nanowires and a compressive stress of 900MPa for InP nanowires has been obtained. The angular component of stress remains small indicating the nanowires will not be twisted as a result of the substrate-induced stress. The radial component of stress attains a maximum at the nanowire/substrate interface and gradually decreases with increasing height along the nanowire-axis.