Impact of Hafnia-Zirconia (HZO) Thin Film on Two-Dimensional Ferroelectric Transistor

Hafnium oxide based CMOS compatible ferroelectric materials such as Zr or Si doped in HfO2 as gate stack has been intensively and extensively investigated to integrate with FETs due to following current CMOS architectures and feasibility ALD (atomic layer deposition) supercycle approach [1]–[2]. Recently, nearly equal mixture of ZrO2 and HfO2 and annealing for ferroelectric transition demonstrate negative capacitance field effect transistor with steep-slope (NC-FET) [3]. For NC effect, TCAD simulation result shows monolayer BP NC-FET with HZO (HfZrOx) has better subthreshold swing (SS). In this work, a compact band model for monolayer black phosphorus is proposed and integrates with hafnium oxide-based ferroelectric material for negative capacitance and memory application. TCAD simulation also shows that monolayer BP Fe-FET with silicon doped Hf02 (Si:HfO2) has good memory window (MW).