Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node

Mn doping in Cu seed has been used to improve EM performance at the 32nm technology node. This paper will show that on an optimized process with CuMn there were different degrees of EM enhancement for geometric variations including line width and electron flow direction. In addition, kinetics experiments on several geometries resulted in activation energies in the range of 0.95–1.33eV. Finally, the Blech threshold (jL)c=338mA/um was derived from the experimental data on various line lengths and current densities.