High breakdown voltage AlGaN/GaN HEMTs with nanoscale compound A1 mole fraction barrier layer

A novel high breakdown voltage AlGaN/GaN high electron mobility transistor with nanoscale compound A1 mole fraction barrier layer is proposed. The compound A1 mole fraction barrier is formed by two different A1 mole fraction AlGaN barrier layers which can effectively modify the channel electric field distribution between the gate and the drain. Comparing to conventional structure, the proposed device shows a 160% improvement of BV (from 310 to 807 V) and a 382% increment of FOM (from 0.179 to 0.862 GW/cm 2 ), respectively.