The variety lateral doping junction termination structures and its manufacturing method of semiconductor devices

The present invention relates to a kind of manufacturing methods of the variety lateral doping junction termination structures of semiconductor devices, comprising steps of providing the substrate of the first conduction type；The exposure mask of field limiting ring ion implanting is formed in substrate surface, exposes the multiple field limiting ring ion implantation windows being located between main knot and cut-off ring；The width and spacing of each injection window are gradually increased along cut-off fourth finger to the direction of main knot；Field limiting ring ion implanting is carried out by the exposure mask, injects the ion of the second conduction type；Thermal diffusion is carried out, makes to form field limiting ring by the ion that exposure mask injects.The invention further relates to a kind of variety lateral doping of semiconductor devices (VLD) terminal structures.The advantage that VLD terminal structure ion implantation concentration linear change, terminal technology high-efficient advantage and field limiting ring undertake pressure resistance is combined together by the present invention well, solves the problems in pressure resistance excessively collection in conventional VLD design, pressure resistance is set to be evenly distributed, Idss has biggish reduction, so as to produce the power device of low cost, high reliability.