Deep centers in neutron-transmutation-doped gallium arsenide

Abstract Three electron traps at 0.21, 0.27 and 0.68 eV below the conduction band edge and a hole trap at around 0.11 eV above the valence band edge have been observed in neutron-transmutation-doped liquid-phase-epitaxial GaAs. All four levels are undetectable after a heat treatment at 600°C for 5 min.