Annealing behavior of MeV implanted carbon in silicon

The annealing behavior of carbon implanted at 1.3 MeV with a dose of 5×1019 ions/m2 into Czochralski‐grown silicon wafers is investigated using an x‐ray double‐crystal method, transmission electron microscopy, secondary‐ion‐mass spectroscopy, and infrared‐absorption spectroscopy. For comparison, the behavior of boron implanted at 2.0 MeV with 5×1019 ions/m2 is also investigated. X‐ray rocking curve analysis shows that carbon produces a larger lattice strain than boron. For the samples annealed at 1273 K, x‐ray data indicate that the carbon atoms, unlike the boron atoms, do not occupy substitutional sites. In addition, the present experimental data suggest that the interaction of interstitial carbon atoms with silicon self‐interstitials produced by ion implantation suppresses the generation of dislocations and brings about the reduction of lattice strain in the implanted region.