Ultraviolet light-emitting diodes with polarization-doped p-type layer
2016
Abstract We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
6
Citations
NaN
KQI