Influence of ionisation track structure on 20 nm FDSOI transistor

Abstract The response of a 20-nm fully depleted silicon on insulator (FDSOI) transistor under irradiation by heavy ions is analysed using GEometry ANd Tracking (Geant4) and Synopsys Sentaurus device simulations. Because of the huge energy fluctuations between thin silicon layers, the deposited energy calculated using surface linear energy transfer (LET) is imprecise under the incidence of heavy ions at very low energy (