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DC Characteristics of InGaP / GaAs HBT Grown by MOCVD With Hydrogen / Nitrogen Ambients
DC Characteristics of InGaP / GaAs HBT Grown by MOCVD With Hydrogen / Nitrogen Ambients
1996
Kie Moon Song
Dae-Kon Oh
Tae-Woo Lee
Moon Pyung Park
Sung Ho Park
Kwang-Eui Pyun
Keywords:
Metalorganic vapour phase epitaxy
Electronic engineering
Heterojunction bipolar transistor
Nitrogen
Electrical engineering
Hydrogen
Engineering
Optoelectronics
ingap gaas
Mechanical engineering
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