GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices

This paper summarizes recent progress on the development of high frequency power switches based on Gallium Nitride (GaN). Both lateral and vertical device structures will be discussed, as well as a new all-GaN complementary gate driver technology which could increase the operating frequency of GaN power circuits beyond 10 MHz. The paper concludes with a discussion on future technologies that could improve the device performance even further, such as superjunction structures.