Electron field emission from SiC∕Si heterostructures by high temperature carbon implantation into silicon

2004 
A high-intensity electron field emission was obtained from a SiC∕Si heterostructure, which was formed by high temperature carbon implantation into silicon. Densely distributed sharp tips were easily obtained at the interface of the SiC∕Si heterostructure by post-implantation etching off the top Si. A low turn-on field of 2.6V∕μm was observed with samples formed by 160keV carbon implantation with a dose of 8.0×1017cm−2. The existence of the densely distributed small protrusions was considered as the main reason for efficient emission.
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