Pulsed-laser deposition of boron nitride films on silicon

Boron nitride (BN) films were deposited on (001) faces of silicon (Si) using pulsed excimer laser ablation at 308 nm and 248 nm. The films were analyzed by Fourier-transform-infrared (FTIR) transmission spectroscopy, x-ray photoelectron-spectroscopy (XPS) and by x-ray diffractometry (XRD). The films are boron rich and contain hexagonal BN (h-BN). They are x-ray amorphous. So far we found no evidence for the formation of cubic BN (c-BN) crystallites in the films.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.