QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

Joe Mahoney,Peter Michael Smowton,Benjamin Maglio,Lydia Jarvis,Craig P. Allford,Samuel Shutts,Mingchu Tang,Huiyun Liu,Nicolas Abadia

QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

2021

Joe Mahoney
Peter Michael Smowton
Benjamin Maglio
Lydia Jarvis
Craig P. Allford
Samuel Shutts
Mingchu Tang
Huiyun Liu
Nicolas Abadia

The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100 °C.

Keywords:

Stark effect
Quantum-confined Stark effect
Doping
Materials science
Indium gallium arsenide
Modulation
Quantum dot
Optoelectronics
Figure of merit
Indium arsenide

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