Room-temperature electroluminescence in the mid-infrared (2-3 μm) from bulk chromium-doped ZnSe

Electroluminescence associated with impact excitation or ionization of deep Cr2+ impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 μm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.