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Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties
Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties
2001
Jong Su Kim
Donghan Lee
In-Ho Bae
J. I. Lee
S. K. Noh
Jinsoo-Kim
Gu Hyun Kim
S. I. Ban
Se-Kyung Kang
Seonpil Kim
Jae-Young Leem
Minhyon Jeon
Jeong Sik Son
Keywords:
Physics
Nuclear magnetic resonance
Doping
Molecular beam epitaxy
Optoelectronics
Condensed matter physics
Correction
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