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Trap Generation in Sc 2 O 3 /La 2 O 3 High-κ Gate Stack by Nanoscale Electrical Stress
Trap Generation in Sc 2 O 3 /La 2 O 3 High-κ Gate Stack by Nanoscale Electrical Stress
2008
Y. C. Ong
D. S. Ang
S. J. O’Shea
Kin Leong Pey
C.H. Tung
Takamasa Kawanago
Kuniyuki Kakushima
Hiroshi Iwai
Keywords:
Nuclear magnetic resonance
Nanotechnology
Nanoscopic scale
Materials science
gate stack
Correction
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