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Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
2020
Rina Tanaka
Katsutoshi Sugawara
Yutaka Fukui
Hideyuki Hatta
Hidenori Koketsu
Hiroyoshi Suzuki
Yusuke Miyata
Kensuke Taguchi
Yasuhiro Kagawa
Shingo Tomohisa
Naruhisa Miura
Keywords:
high concentration
Ion implantation
Composite material
trench gate
Materials science
Performance improvement
Correction
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