Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion

Very low loss extended cavity lasers have been fabricated using the impurity-free vacancy diffusion technique. The average loss, obtained from the slope of measured loss as a function of the extended cavity length, was 10 dB/cn for extended cavities annealed at 900 degrees C for 30 s. The lowest loss of 3.6 dB/cm was obtained from a device annealed at 950 degrees C for 30 s.