A contribution to oxide precipitate nucleation in nitrogen doped silicon

Based on Fourier transform infrared (FTIR) spectroscopy and bulk micro-defect investigations, in relation to earlier results of other groups, we suggest the following model for oxide precipitate nucleation in N-doped silicon. Around 600 °C a nucleation maximum exists where oxide precipitates are formed via oxygen attachment to both NOO and NNO complexes. These complexes are formed by the reaction of NN with interstitial oxygen. Vacancy supersaturation enhances this type of precipitate nucleation. A second nucleation maximum exists around 900 °C. This is assumed to be due to a vacancy assisted oxynitride SiO x N y based nucleation process. The higher density of the oxynitride phase compared to silicon oxide and a higher residual vacancy concentration would explain the observed shift of the maximum nucleation rate to higher temperatures around 900 °C.