Method for reducing the surface deformation of the polished wafer

(57) Abstract: polished one surface, polished semiconductor (14) to improve the nanotopology and flatness of the wafer forming method of a wafer. Method, the surface characteristics of the rear surface, for example, to reduce the influence of the nanotopology of the edge ring phenomenon and rear laser marking, whereby the uniformity of the oxide layer for chemical / mechanical planarization (CMP) process, and wax (12) by improving the flat of the polished front surface of the wafer after polishing the block (10). Edge ring causes a deformation and stress in the wafer by mounting is held by wax. After mounting, the wax, heated and relieve wafer, without weakening the binding of the wafer polishing block, except stress. Polishing the wafer, removing the polishing block. Polished surface is substantially After removing the blocks, holding the shape.