Hydroxyl-promoted synthesis of GaN nanorods on SBA-15 surface

Abstract A novel hydroxyl-promoted method, which comprises an effective coordination-catalytic step, has been successfully developed to synthesize GaN nanorods (dimensions 5–60×20–800 nm) on SBA-15 surface at low temperature. The crystalline perfection of GaN products can be improved by this method. The growth mechanism of the GaN nanorods is suggested. Room-temperature photoluminescence spectrum reveals an intense blue luminescence band centered at 440 nm (2.82 eV), which is believed to be associated with the synergistic effect of the defect levels.