One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed Al x O y Gate Dielectric

Indium–gallium–zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance Al x O y gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin Al x O y film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (~3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >10 5 and a subthreshold swing ( SS ) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics.