Dopant influence on polysilicon capacitor oxide failure

In this work, we investigate polysilicon capacitor oxide defectivity as a function of dopant contamination in a 0.5 /spl mu/m mixed signal process. Experiments show that shallow n and p type dopant implants, used to mimic a cross contamination problem discovered in a PECVD cluster tool, can significantly degrade oxide integrity. Various possible mechanisms of the increased defectivity are discussed.