Quantum dot light emitting diode containing doped hole injection layer and fabrication method of quantum dot light emitting diode

The invention is applicable for the field of a light emitting diode, and provides a quantum dot light emitting diode containing a doped hole injection layer and a fabrication method of the quantum dot light emitting diode. The quantum dot light emitting diode comprises a substrate, an anode layer, the doped hole injection layer, a hole transfer layer, a quantum dot light emitting layer, an electron transfer layer and a cathode layer which are sequentially arranged in a lamination way, the doped hole injection layer is made of P-doped Poly-TPD, and a doping agent in the P-doped Poly-TPD is F4-TCNQ.