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Wide bandgap HEMT device (GaN) characterization and modeling for high power amplifier design
Wide bandgap HEMT device (GaN) characterization and modeling for high power amplifier design
2016
Shashwat
Mohammad S. Hashmi
Keywords:
Amplifier
High-electron-mobility transistor
Electrical engineering
Materials science
Band gap
Electronic engineering
Computer Aided Design
Optoelectronics
high power amplifier
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