Screening of built-in electric fields in group III-nitride laser diodes observed by means of hydrostatic pressure

We investigate screening of polarization induced electric fields in a group III-nitride based laser diode with InGaN active layers. Via hydrostatic pressure dependent electroluminescence measurements and additional photocurrent spectroscopy experiments, it is shown that the introduction of Si doping with a concentration of 1.10 1 9 cm - 3 in the barriers of the active region leads to adequate screening of polarization induced electric fields.