An Improved Performance of High Power Application of Al 0.25 Ga 0.75 N/AlN/GaN/Al 0.25 Ga 0.75 N Pseudo-morphic High Electron Mobility Transistor (PHEMT): Numerical Simulation Study

In this paper a 9 nm T-shaped gate length, Pseudo-morphic High Electron Mobility Transistor (pHEMT AlGaN/AlN/GaN/AlGaN) is studied; we use Atlas SILVACO-TCAD software. DC, AC and RF performances assessment allow to exhibit interesting results such as a maximum drain current IDSmax = 35 mA at VGS = 0 V, a knee voltage Vknee = 0.5 V with ON-resistance Ron = 0.8 Ω-mm, a sub-threshold swing of 75 mV/decade, a maximum transconductance value gm = 160 mS/mm, a DIBL of 36 mV/V, a drain lag of 8.5%, a cut-off frequency of 110 GHz, a maximum oscillation frequency of 800 GHz, and very suitable breakdown voltage VBR of 53.1 V. This device can be used in radar, high power and amplifier applications.