Old Web
English
Sign In
Acemap
>
Paper
>
Research of low noise pHEMT transistors in equipment for microwave radiometry using numerical simulation
Research of low noise pHEMT transistors in equipment for microwave radiometry using numerical simulation
2020
V. G. Tikhomirov
A. G. Gudkov
S. V. Agasieva
V. B. Yankevich
M K Popov
S. V. Chizhikov
Keywords:
Transistor
Optoelectronics
microwave radiometry
Computer simulation
low noise
High-electron-mobility transistor
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
5
References
0
Citations
NaN
KQI
[]