Method for manufacturing high-growth-rate LED (light-emitting diode) with P-type GaN structure

The invention discloses a method for manufacturing a high-growth-rate LED (light-emitting diode) with a P-type GaN structure. The method comprises the following steps of: heating a substrate in a reaction chamber, cooling and growing a low-temperature GaN buffer layer, and heating and growing a high-temperature GaN buffer layer; growing an N-type GaN layer on the buffer layer, growing 2 to 10 InGaN/GaN quantum wells on the N-type GaN layer, and growing 3 to 15 InGaN/GaN quantum wells; and growing a P-type GaN layer on the quantum well layer. The P-type GaN layer is grown by means of a high growth rate, the growth time is shortened, In exertion can be reduced due to the LED structure, and the damage to the InGaN close to the period is reduced; and therefore, the damage to a multiple quantum well structure in a luminous layer is effectively reduced, the quantum well crystal quality is improved, and the light extraction efficiency is improved.