Ultrafast photoinduced nonthermal melting due to local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied for several decades, but the melting mechanism is still under debate. Based on real-time time-dependent density functional theory (rt-TDDFT) simulation, we reveal that the rapid nonthermal melting induced by photoexcitation in silicon originates from a local dynamic instability rather than a homogeneous inertial mechanism. Due to this local dynamic instability, any initial small random displacements can be amplified, create a local self-trapping mechanism for the excited carrier. This carrier self-trapping will amplify the initial randomness, cause locally nonthermal melting spots. Such locally melted spots gradually diffuse to the whole system achieving overall nonthermal melting within 200 fs. We also found that the initial hot carrier cooling towards the anti-bonding state is essential in order to realize this dynamic instability. This causes different cooling time depending on the excitation laser frequency, in accordance with the experimental observations. Our study provides an exquisite detail for the nonthermal melting mechanism.