600V shielded trench split-gate VDMOS improving the figure of merit

Xiaopei Chen,Quanyuan Feng,Tao Jin

600V shielded trench split-gate VDMOS improving the figure of merit

2019

Xiaopei Chen
Quanyuan Feng
Tao Jin

ABSTRACTA shielded trench split-gate vertical double-diffused metal-oxide-semiconductor field-effect transistor (ST-SG-VDMOS) is proposed, and the analytical model for the main components of specif...

Keywords:

Engineering physics
Shielded cable
Trench
Figure of merit
Mathematics
Electronic engineering
Optoelectronics
Transistor

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