Si surface texture by pyramid structure ZnO glass mask blank
2013
In this work, a textured surface structure of Si substrate has been prepared using pyramid structure ZnO glass as
mask, and the structure of textured surface and reflection characteristics of Si substrate have been analyzed by scanning
electron microscope (SEM) and reflectivity spectra. The results show that U-shaped structure is formed on the surface of
photoresist after the incidence of ultraviolet light, and it is caused by the different decrement of light intensity in the ZnO
glass Mask Blank. The U-shaped structure which is same with the photoresist appears at the surface of Si substrate after
reactive ion etching (RIE) process, and the size of U-shaped structure is in the range of 0.5-1.5 μm. Needle-like
morphology caused by the RIE process appears on the U-shaped structure. The reflectivity of the U-shaped Si surface is
decreased by the needle-like morphology, and it is protected by the U-shaped structure. The textured structure etched at
different pressure is further investigated, and the results suggest that the reflectance of the sample reduces firstly and then
increases with the decrease of pressure, and a minimal average reflectance is obtained at 0.8 Pa. The ion damage of Si
surface is reduced in the second texturing process, which is useful for film deposition. The results suggest that low
reflectance and textured surface of Si substrate can be obtained by ZnO glass mask blank with natural pyramid structure,
which is meaningful for light trapping in solar cells.
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