Emission from a planar structured electroluminescent device on silicon wafer

Abstract Manganese (Mn)-doped zinc silicate (Zn 2 SiO 4 ) film was prepared by a sol–gel method on silicon wafer as luminescent film for a planar structured metal–insulator–metal (MIM) electroluminescent (EL) device. The device emits green light under alternative current (ac) with frequency in the range of 200 Hz to 1 kHz. The electroluminescence spectrum of the EL device was consistent with the photoluminescence spectrum of the Mn-doped Zn 2 SiO 4 , so the EL emission resulted from the transition of 4 T 1 ( 4 G)– 6 A 1 ( 6 S) of Mn ion. The excitation of the EL emission was explained using accumulated electric field model.