Half-micron excimer laser lithography using a 1:1 broadband catadioptric lens with a half-circle field

1997 
We have designed and constructed an excimer laser lithography system at 248.3 nm. The system consists of a KrF excimer laser illuminator and a 1:1 broadband catadioptric projection lens with a half circle image field. Resolutions of 0.6 micrometers L/S and 0.5 micrometers L/S are obtained in AZ1350J resist and PMMA resist respectively.
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