Integrated semiconductor switching element and methods of manufacture

Integrated semiconductor switching element having the following features: - a first connection zone (10) of a first conductivity type (n), to which an electrically conducting first connection electrode (12) is connected, - a second connection zone (20) of the first conductivity type (n), - a between the first and second connection zone (10, 20) arranged in the substrate zone (30) of a second conductivity type (p), - a substrate adjacent to the zone (30) arranged opposite the first and second connection regions (10, 20) and the substrate zone (30) insulated control electrode, characterized, in that at least in the transition area between the first junction zone (10) and the substrate zone (30) impurities for effecting an ohmic resistance (R) between the substrate zone (30) and the first connection zone (10) are introduced.