Analysis of Anomalous Behavior during Negative Drain Input Operation of Fully Isolated nLDMOS

This paper presents analyses of anomalous behaviors during negative drain input operation of fully isolated nLDMOS. Unexpected I−V curves, i) multiple polarity switching of I S/BG , ii) I SUB leakage before the parasitic PNP activation and iii) abrupt increases of all terminal currents are shown. Physical mechanisms of those anomalous behaviors are clarified by TCAD simulation.