Light-emitting diode provided with current-blocking layer and manufacturing method of light-emitting diode

The invention provides a light-emitting diode provided with a current-blocking layer and a manufacturing method of the light-emitting diode and relates to the technical field of production of light-emitting diodes. According to the current-blocking layer, the mode that an undoped aluminium nitride material directly grows on an epitaxy structure in an epitaxy mode is adopted; the aluminium nitride material is adopted as the current-blocking layer, so that reliability of a P-type electrode can be effectively improved, the possibility that electrode cracking occurs easily in the routing process of the P type electrode is lowered, the expansion effect of a P-type current of the light-emitting diode is effectively enhanced, and reliability of the electrode cannot be lowered.