Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs

This paper employs a state-of-the-art semi-classical transport model for inversion layers to analyze the I on in Si, sSi, Ge and sGe n- and p-MOSFETs by accounting for all the relevant scattering mechanisms (including the remote surface-optical phonons (SOph) and remote Coulomb scattering (remQ) related to high-κ dielectrics), in which strain is implicitly introduced by a modification of the band structure. Our models are first validated against experiments for both mobility and IDS in nanoscale transistors. Then the I on in Ge and Si MOSFETs is compared for different crystal orientations and strain conditions.