Comparison of annealing behavior in photoacoustic signal intensity of Si+implanted InP by microphone and piezoelectric transducer methods

The damage produced with the Si + -implantation in InP generated the heat and the photoacoustic (PA) signal intensity at energies lower than Eg increased in the microphone method, while the damage suppressed the generation and the propagation of the elastic wave and the PA intensity at energies higher than Eg decreased in the piezoelectric transducer method. The carrier activated with the annealing also suppressed the generation of the elastic wave and the PA intensity at energies higher than Eg decreased in the piezoelectric transducer method.