Emission at 1.55 µm from InAs/GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation

By introducing antimony during the growth of InAs/GaAs quantum dots (QDs) by metalorganic chemical vapor deposition, we have achieved ground-state emission at 1.55 µm (and beyond) from InAs/GaAs QDs capped by an In0.24Ga0.76As strain-reducing layer (SRL) at room temperature (RT). We show that antimony irradiation results in the formation of QD sub-ensembles. Photoluminescence intensity is strongly enhanced (×100) at RT compared to Sb-free QDs capped by higher In-content SRL in which ground-state emission saturates at wavelengths shorter than 1.51 µm. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)