Fabrication and optical properties of transferable three-dimensional GaP nanopore array film by electrochemical exfoliated method

Abstract The fabrication of transferable three-dimensional GaP nanopore array film (3D GaP NPs film) has been first proposed and realized on the n-GaP (111) wafer substrate by electrochemical exfoliated method in a mixed solution. One GaP single crystal wafer can be repeated stripping dozens of times using this strategy, which gives a higher utilization ratio of GaP wafer compared to other methods. 3D GaP NPs films were systematically characterized by different techniques, and the etching mechanism was explored. The average size of the nanopores can be adjusted by changing etching conditions. The GaP NPs film shows much higher Raman intensity due to the coupling of the incident and the scattered fields with the low-order-structure resonances in nanopores. Besides, its photoluminescence is enhanced because more photogenerated carrier recombination arises from surface state defects. The transferable 3D GaP NPs film provides possibilities for establishing different X/GaP/Y sandwich structure heterojunctions, which could be used in functional devices.