Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

This work was supported by: (i) Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UID/FIS/04650/2013; (ii) European COST Action MP1308-TO-BE; (iii) Project Norte- 070124-FEDER-000070 Nanomateriais Multifuncionais. The authors J.P.B.S., K.K. and F.L.F. are grateful for financial support through the FCT Grants SFRH/BPD/92896/2013, SFRH/BPD/87215/2012 and CNPq/PDE 249791/2013-7, respectively. The authors thank the Central Laboratory of Electron Microscopy (LCME – UFSC) and the Laboratory of X-rays Diffraction (LDRX - UFSC) by facilities. The authors would also like to thank Engineer Jose Santos for technical support at Thin Films Laboratory