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120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography
120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography
2013
ei suke tokumitu
Eisuke Tokumitsu
tatuya simoda
Tatsuya Shimoda
Keywords:
Thin-film transistor
Gate dielectric
Nano-
Ferroelectricity
Optoelectronics
Lithography
Communication channel
Materials science
Electronic engineering
Nanoimprint lithography
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