Effect of the spatial gain and intensity variations on a two-section Fabry-Perot semiconductor laser: an analytical study

An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. The validity of the model extends to any homogeneously broadened laser. >