Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe 2

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe 2 . Because of its excellent compatibility with mass production, the application of WSe 2 UTB-PT for high-speed proximity interactive display has been proposed.