Improvement of metal-semiconductor-metal GaN ultraviolet detectors

Summary form only given. We have carried out a systematic study on the performance of the photoconductors made from GaN grown by metal organic chemical vapor deposition (MOCVD) using different growth conditions, and have found that both response time and responsivity of the GaN detector are improved when the material is grown using increased ammonia flow rates. We attribute this improvement to the reduction of the point defects in GaN.