Patterned graphene and preparation method therefor

The invention provides patterned graphene and a preparation method therefor. The preparation method comprises the following steps: forming a photoresist layer with a hollow structure on the surface of a hydrophilic substrate by adopting a photoetching technology; filling the hollow structure by using a graphene oxide solution, and carrying out drying treatment on part of the graphene oxide solution in the hollow structure so as to form solid-state graphene oxide; removing the photoresist layer; and carrying out reduction on the solid-state graphene oxide, thereby obtaining the patterned graphene. According to the preparation method, the process is simple, the problem of other preparation methods that the surface of graphene is contaminated is avoided, and the control on the thickness of a graphene film can be achieved through selecting the concentration of an aqueous solution of graphene oxide, so that the preparation method can be applicable to the preparation of conducting channels in graphene devices and the implementation of electric interconnection of the graphene in circuits.