Study the effects of nitrogen annealing on oxygen precipitation in fast neutron-irradiated Czochralski silicon

Abstract The effects of nitrogen on the annealing behavior of fast-neutron irradiation CZ-Si were studied using Fourier transform infrared spectrometry (FTIR). Compared with annealing in argon atmosphere, concentration of interstitial oxygen decreased greatly after annealing in nitrogen atmosphere. Some new absorption peaks at 801 and 1030 cm −1 were found using low-temperature (20 K) FTIR which were connected with N–O complexes. The IR absorption peaks at 1078, 1090 and 1224 cm −1 are instead connected with oxygen precipitates. Among these, the absorption at 1224 cm −1 not be found in normal CZ-Si and is probably associated to lamellar oxygen precipitation.