GaAs-based MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer deposition

Peide D. Ye,G. D. Wilk,B. Yang,J. Kwo,H.-J. L. Gossmann,M. Frei,S.N.G. Chu,S Nakahara,J. P. Mannaerts,M. Sergent,M. Hong,K.K. Ng,J. Bude

GaAs-based MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer deposition

2003

Peide D. Ye
G. D. Wilk
B. Yang
J. Kwo
H.-J. L. Gossmann
M. Frei
S.N.G. Chu
S Nakahara
J. P. Mannaerts
M. Sergent
M. Hong
K.K. Ng
J. Bude

In this paper, we demonstrate for the first time GaAs-based MOSFETs with excellent performance using of CVD is a very robust, highly manufacturable process.

Keywords:

Dielectric
Electronic engineering
Physics
High-κ dielectric
MOSFET
Atomic layer deposition
Gallium arsenide
Optoelectronics

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